Nanowire FET and FinFET hybrid technology

ABSTRACT

Hybrid nanowire FET and FinFET devices and methods for fabrication thereof are provided. In one aspect, a method for fabricating a CMOS circuit having a nanowire FET and a finFET includes the following steps. A wafer is provided having an active layer over a BOX. A first region of the active layer is thinned. An organic planarizing layer is deposited on the active layer. Nanowires and pads are etched in the first region of the active layer using a first hardmask. The nanowires are suspended over the BOX. Fins are etched in the second region of the active layer using a second hardmask. A first gate stack is formed that surrounds at least a portion of each of the nanowires. A second gate stack is formed covering at least a portion of each of the fins. An epitaxial material is grown on exposed portions of the nanowires, pads and fins.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of U.S. application Ser. No. 13/286,311filed on Nov. 1, 2011, now U.S. Pat. No. 8,580,624, the disclosure ofwhich is incorporated by reference herein.

FIELD OF THE INVENTION

The present invention relates to integrated circuits, and moreparticularly, to hybrid nanowire field effect transistor (FET) andFinFET devices and methods for fabrication thereof

BACKGROUND OF THE INVENTION

Complementary metal-oxide semiconductor (CMOS) circuits typicallyinclude a combination of n-type and p-type field effect transistor (FET)devices. Each FET device includes a source, a drain and a channelbetween the source and the drain. A gate electrode over and/orsurrounding the channel regulates electron flow between the source andthe drain.

As feature sizes of CMOS circuits get increasingly smaller (commensuratewith current technology) a number of challenges arise. For instance,scaling brings about issues related to electrostatics and mobilitydegradation in CMOS devices. A finFET architecture offers increasedscaling opportunities beyond that attainable with planar devices. See,for example, B. Yu et al., “FinFET Scaling to 10 nm Gate Length,” IEDM(2002). FinFET devices exhibit fast switching times and high currentdensities.

However, some key technical challenges still have yet to be overcomewith CMOS device scaling. One challenge is gate length scaling (andmaintaining performance while doing so). Another is lithography atincreasingly scaled dimensions.

Thus, techniques that permit gate length scaling without performancedegradation and a more uniform CMOS circuit structure to pattern withlithography would be desirable.

SUMMARY OF THE INVENTION

The present invention provides hybrid nanowire field effect transistor(FET) and FinFET devices and methods for fabrication thereof. In oneaspect of the invention, a method for fabricating a complementarymetal-oxide semiconductor (CMOS) circuit having a nanowire field-effecttransistor (FET) and a finFET is provided. The method includes thefollowing steps. A wafer is provided having an active layer over aburied oxide (BOX), wherein the active layer has at least a first regionand a second region. The first region of the active layer is thinned,such that the first region and the second region of the active layerform a stepped surface. An organic planarizing layer is deposited on theactive layer so as to provide a flat surface over the stepped surface. Afirst lithography hardmask is formed on the organic planarizing layerover the first region of the active layer and a second lithographyhardmask is formed on the planarizing layer over the second region ofthe active layer. Nanowires and pads are etched in the first region ofthe active layer using the first hardmask, wherein the pads are attachedat opposite ends of the nanowires in a ladder-like configuration. Thenanowires are suspended over the BOX. Fins are etched in the secondregion of the active layer using the second hardmask. A first gate stackis formed that surrounds at least a portion of each of the nanowires,wherein the portions of the nanowires surrounded by the first gate stackserve as a channel region of the nanowire FET. A second gate stack isformed covering at least a portion of each of the fins, wherein theportions of the fins covered by the second gate stack serve as a channelregion of the finFET. An epitaxial material is grown on exposed portionsof the nanowires, pads and fins, wherein the epitaxial material grown onthe exposed portions of the nanowires and pads serve as source and drainregions of the nanowire FET and wherein the epitaxial material grown onthe exposed portions of the fins serve as source and drain regions ofthe finFET.

In another aspect of the invention, a CMOS circuit is provided. The CMOScircuit includes a wafer having a BOX; a nanowire FET on the BOX and afinFET on the BOX. The nanowire FET includes nanowires and pads attachedat opposite ends of the nanowires in a ladder-like configuration,wherein the nanowires are suspended over the BOX; a first gate stackthat surrounds at least a portion of each of the nanowires, wherein theportions of the nanowires surrounded by the first gate stack serve as achannel region of the nanowire FET; and an epitaxial material onportions of the nanowires and pads that serve as source and drainregions of the nanowire FET. The finFET includes a plurality of fins; asecond gate stack covering at least a portion of each of the fins,wherein the portions of the fins covered by the second gate stack serveas a channel region of the finFET; and an epitaxial material on portionsof the fins that serve as source and drain regions of the finFET.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a three-dimensional diagram illustrating a starting structurefor a complementary metal-oxide semiconductor (CMOS) circuit fabricationprocess, i.e., a silicon-on-insulator (SOI) wafer having an active layerover a buried oxide (BOX) according to an embodiment of the presentinvention;

FIG. 2 is a three-dimensional diagram illustrating a hardmask havingbeen formed over a portion of the wafer in which an n-type fin fieldeffect transistor (NFET) device will be formed according to anembodiment of the present invention;

FIG. 3 is a three-dimensional diagram illustrating a region of theactive layer not masked by the hardmask having been thinned according toan embodiment of the present invention;

FIG. 4 is a three-dimensional diagram illustrating an organicplanarizing layer having been deposited on the stepped active layeraccording to an embodiment of the present invention;

FIG. 5 is a three-dimensional diagram illustrating a fin lithographyhardmask having been patterned on the organic planarizing layer over thethicker region of the active layer and a nanowire/pad lithographyhardmask having been patterned on the organic planarizing layer over thethinner region of the active layer according to an embodiment of thepresent invention;

FIG. 6 is a three-dimensional diagram illustrating an etch having beenperformed through the fin and the nanowire/pad lithography hardmasks tocompletely form nanowires and pads in the thinner region of the activelayer and only partially etch fins in the thicker region of the activelayer according to an embodiment of the present invention;

FIG. 7 is a three-dimensional diagram illustrating the nanowires havingbeen suspended over the BOX according to an embodiment of the presentinvention;

FIG. 8 is a three-dimensional diagram illustrating a resist layer havingbeen formed over the nanowires and pads according to an embodiment ofthe present invention;

FIG. 9 is a three-dimensional diagram illustrating etching of the finshaving been completed, wherein the fins and pads are protected by theresist layer during the etch according to an embodiment of the presentinvention;

FIG. 10 is a three-dimensional diagram illustrating the resist layerhaving been removed according to an embodiment of the present invention;

FIG. 11 is a three-dimensional diagram illustrating the nanowires andfins having optionally been thinned and smoothed according to anembodiment of the present invention;

FIG. 12 is a three-dimensional diagram illustrating a gate stack havingbeen patterned on the nanowires and a gate stack having been patternedon the fins according to an embodiment of the present invention;

FIG. 13A is a cross-sectional diagram illustrating a cut through aportion of the nanowire gate stack according to an embodiment of thepresent invention;

FIG. 13B is a cross-sectional diagram illustrating a cut through aportion of the fin gate stack according to an embodiment of the presentinvention;

FIG. 14 is a three-dimensional diagram illustrating spacers having beenformed on opposite sides of gate stacks according to an embodiment ofthe present invention;

FIG. 15 is a three-dimensional diagram illustrating selective epitaxialsilicon growth having been used to thicken the exposed portions of thenanowires, pads and fins so as to form source and drain regions of thedevices according to an embodiment of the present invention; and

FIG. 16 is a three-dimensional diagram illustrating a silicide havingbeen formed on the epitaxial silicon according to an embodiment of thepresent invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIGS. 1-16 are diagrams illustrating an exemplary methodology forfabricating a complementary metal-oxide semiconductor (CMOS) circuit.The CMOS circuit will include an n-type field-effect transistor (NFET)device and a p-type FET (PFET) device. In the example now provided, theNFET device will employ a nanowire FET architecture and the PFET willemploy a finFET architecture.

The fabrication process begins with a semiconductor-on-insulator (SOI)wafer. See FIG. 1. An SOI wafer typically includes a layer of asemiconductor material (also commonly referred to as asemiconductor-on-insulator layer or SOI layer) separated from asubstrate by an insulator. When the insulator is an oxide (e.g., silicondioxide (SiO₂)), it is commonly referred to as a buried oxide, or BOX.According to the present techniques, the SOI layer will serve as anactive layer of the device in which the nanowires and fins will bepatterned. Thus, the SOI layer will be referred to herein as an activelayer.

In the example shown in FIG. 1, the starting wafer includes an activelayer 104 over a BOX 102. For ease of depiction, a substrate typicallylocated below the BOX, is not shown. According to an exemplaryembodiment, active layer 104 is formed from a semiconducting material,such as silicon (Si) (e.g., crystalline silicon), silicon germanium(SiGe) or germanium (Ge). Thus, the active layer 104 may also bereferred to as a “semiconductor device layer” or simply as a“semiconductor layer.”

Further, as will be apparent from the following description, a thicknesst of active layer 104 will be equivalent to a final desired fin heightfor the PFET device. According to an exemplary embodiment, active layer104 preferably has a thickness of from about 5 nanometers (nm) to about40 nm. Commercially available SOI wafers typically have a thicker SOIlayer. Thus, the SOI layer of a commercial wafer can be thinned usingtechniques such as oxidative thinning to achieve the desired activelayer thickness for the present techniques.

Next, as shown in FIG. 2, a hardmask 202 is formed over a portion of theactive layer 104 in which the PFET device will be formed. The hardmask202 protects the region it covers during the active layer thinning step(see below). According to an exemplary embodiment, hardmask 202 isformed from a nitride hardmask material, such as silicon nitride (SiN)which is blanket deposited onto the active layer 104 using, e.g.,low-pressure chemical vapor deposition (LPCVD), and then patterned usinglithography and nitride-selective reactive ion etching (RIE) techniquesknown in the art to open up holes in (i.e., remove) the nitride hardmaskin regions where the nanowire NFET device will be formed.

A region of the active layer 104 not masked by the hardmask 202 (i.e.,the region that will be used to form the nanowire NFET device) is thenthinned. See FIG. 3. According to an exemplary embodiment, this thinningis achieved using a timed RIE which is selective for the material of theactive layer 104 vis-à-vis the hardmask 202. Although, as shown in FIG.3, the hardmask 202 may be thinned in the process. By way of exampleonly, the active layer 104 is reduced in this process to a thickness t2of from about 3 nm to about 20 nm. The result is vertical steps havingbeen formed in the active layer, i.e., a first thicker region (i.e.,having thickness t) and a second thinner region (i.e., having athickness t2) having been formed in active layer 104. As describedbelow, nanowires will be formed in this thinned region of the activelayer 104.

An organic planarizing layer 402 is then spin-coated onto the steppedactive layer 104. See FIG. 4. The organic planarizing layer will serveto fill in the stepped surface of the active layer, providing a flatplanar surface for nanowire and fin patterning (see below). According toan exemplary embodiment, the organic planarizing layer 402 is formedfrom an aromatic cross-linkable polymer (e.g., naphthalene-based) in asolvent and is coated onto the active layer 104 to a thickness of fromabout 30 nm to about 300 nm. Spin-coating ensures that the organicplanarizing layer sufficiently fills in the stepped topography of theactive layer.

Other suitable materials for use in the organic planarizing layer 402include but are not limited to those materials described in U.S. Pat.No. 7,037,994 issued to Sugita et al. entitled “AcenaphthyleneDerivative, Polymer, and Antireflection Film-Forming Composition,” U.S.Pat. No. 7,244,549 issued to Iwasawa et al. entitled “Pattern FormingMethod and Bilayer Film,” U.S. Pat. No. 7,303,855 issued to Hatakeyamaet al. entitled “Photoresist Undercoat-Forming Material and PatterningProcess” and U.S. Pat. No. 7,358,025 issued to Hatakeyama entitled“Photoresist Undercoat-Forming Material and Patterning Process.” Thecontents of each of the foregoing patents are incorporated by referenceherein.

A post-apply bake is then performed to cross-link the organicplanarizing layer and bake off the solvent. According to an exemplaryembodiment, the post-apply bake is conducted at a temperature of up toabout 250 degrees Celsius (° C.), e.g., from about 200° C. to about 250°C.

Standard lithography techniques are then used to pattern a firsthardmask 502 which will be used to pattern fins in the thicker region ofthe active layer 104 (also referred to herein as a fin lithographyhardmask) and a second hardmask 504 which will be used to patternnanowires (and pads) in the thinner region of the active layer 104 (alsoreferred to herein as a nanowire/pad lithography hardmask). Since theorganic planarizing layer 402 provides a continuous flat surface overthe two regions of the active layer, the hardmasks 502 and 504 can beformed from a common material, using a single hardmask fabricationprocess. By way of example only, a suitable hardmask material (e.g., anitride material, such as SiN) can be blanket deposited over the organicplanarizing layer 402 and then patterned using a standardphotolithography process with the footprint and location of hardmasks502 and 504. As shown in FIG. 5, the fin lithography hardmask has beenpatterned on the organic planarizing layer over the thicker region ofthe active layer and the nanowire/pad lithography hardmask having beenpatterned on the organic planarizing layer over the thinner region ofthe active layer.

The fin lithography hardmask will dictate the dimensions and spacing(i.e., pitch, or distance between fins) in the final FinFET device.Thus, the fin lithography hardmask should be patterned with the desireddimensions and pitch commensurate with those of the fins. Further, asshown in FIG. 5, the nanowire/pad hardmask has a ladder-likeconfiguration. This ladder-like configuration will be transferred to theactive layer, wherein the nanowires will be patterned like rungs of aladder interconnecting the pads (see below). The pads will be used toform source and drain regions of the nanowire FET. For some advancedpatterning techniques such as sidewall image transfer, it may bepreferable for the nanowires and fins to have the same lithographicwidth w.

An etch through the hardmasks 502/504 and the organic planarizing layer402 is then used to completely form the nanowires and pads in thethinner region of the active layer 104 and only partially etch the finsin the thicker region of the active layer 104. See FIG. 6. According toan exemplary embodiment, this etch is performed using a series of RIEsteps. For example, a first RIE step can be used that is selective foretching the organic planarizing layer. This first RIE step can beperformed using an oxygen-containing, e.g., N₂/O₂ chemistry. A secondRIE step can then be used to transfer the fin pattern into the hardmask202, forming a patterned hardmask (see FIG. 6). This second RIE step maybe performed using, for example, a CF₄ etch chemistry. A third RIE stepcan then be used to transfer the nanowire/fin pattern into the activelayer. This third RIE step may be performed using a fluorine-containing,e.g., CHF₃/CF₄, or bromine chemistry. The third RIE is end-pointed whenthe nanowires and pads in the thinner region of the active layer arefully etched, and any remaining organic planarizing layer is strippedwith, for example, a wet strip or O₂ plasma. At this point the fins inthe thicker region of the active layer will only be partially etched.Namely, this third etch step into the active layer only extends part waythrough the thicker region of the active layer. Such a configuration isimportant since the remaining active layer will protect the BOX 102 inthe thicker region during the process of undercutting the BOX 102 in thethinner region below the nanowires. See description of FIG. 7, below.

As shown in FIG. 6, the nanowires and pads are formed having aladder-like configuration. Namely, the pads are attached at oppositeends of the nanowires like the rungs of a ladder.

The nanowires are then suspended over the BOX. See FIG. 7. According toan exemplary embodiment, the nanowires are suspended by undercutting theBOX 102 beneath the nanowires using an isotropic etching process. Thisprocess also laterally etches portions of the BOX 102 under the pads.See FIG. 7. The isotropic etching of the BOX 102 may be performed, forexample, using a diluted hydrofluoric acid (DHF). A 100:1 DHF etchesapproximately 2 nm to 3 nm of BOX layer 102 per minute at roomtemperature. As highlighted above, the incomplete etch in the thickeractive regions where the fins are formed protects the fins from BOXundercut during this step.

Following the isotropic etching of the BOX 102 the nanowires may besmoothed to give them an elliptical and in some cases a cylindricalcross-sectional shape. The smoothing of the nanowires may be performed,for example, by annealing the nanowires in a hydrogen-containingatmosphere. Exemplary annealing temperatures may be from about 600° C.to about 1,000° C., and a hydrogen pressure of from about 600 torr toabout 700 torr may be employed. Exemplary techniques for suspending andre-shaping nanowires may be found, for example, in U.S. PatentApplication Publication No. 2010/0193770 A1, filed by Bangsaruntip etal., entitled “Maskless Process for Suspending and Thinning Nanowires,”the entire contents of which are incorporated by reference herein.

In order to finish etching the fins, a resist layer 802 is first formedover the nanowires and pads, to protect the nanowires and pads duringetching of the fins. See FIG. 8. To form resist 802, a suitable resistmaterial is coated on the device and then patterned using conventionallithography and etching techniques into resist 802. Suitable resistmaterials include, but are not limited to poly(methyl methacrylate)(PMMA).

The etching of the fins is then completed. See FIG. 9. Suitable RIE etchchemistries for this step were provided above. As shown in FIG. 9, thepatterned hardmask on the fins is thinned during this fin etchingprocess. The remaining patterned hardmask may optionally be removed atthis point, using for example a RIE step. Alternatively, as shown in thefigures, the remaining patterned hardmask may be removed later in theprocess.

Following the fin etch, the resist 802 can be removed using, forexample, a resist stripper. See FIG. 10. Suitable resist strippersinclude, but are not limited to, N-methyl pyrolidinone (NMP).

Optionally, the nanowires and fins can be thinned and smoothed. See FIG.11. As described in conjunction with the description of FIG. 7, above,the nanowires may be re-shaped (e.g., smoothed) to an elliptical (e.g.,circular) cross-sectional shape earlier in the process. Now, thenanowires and fins are thinned, which also can serve to give them asmoother surface.

By way of example only, the nanowires and fins may be thinned using ahigh-temperature (e.g., from about 700° C. to about 1,000° C.) oxidationof the nanowires and fins followed by etching of the grown oxide. Theoxidation and etching process may be repeated x number of times toachieve desired nanowire and fin dimensions.

A gate stack 1202 is then patterned on the nanowires and a gate stack1204 is patterned on the fins. See FIG. 12. The portions of thenanowires and fins surrounded/covered by the gates stacks will serve aschannel regions of the respective FET devices. Gate stack 1202 containsa dielectric (or combination of dielectrics), a first gate material(such as a metal(s)) and optionally a second gate material 1208 a (suchas a metal or doped polysilicon layer), all that surround the nanowires(see FIG. 13, described below). Gate stack 1204 contains a dielectric(or combination of dielectrics), a first gate material (such as ametal(s)) and optionally a second gate material 1208 b (such as a metalor doped polysilicon layer) that covers at least a portion of the fins,wherein the gate dielectric separates the gate materials 1208 from thefins. For clarity, in the following description and in the figures, thematerials (i.e., dielectrics and gate materials) are given thedesignation ‘a’ (e.g., 1208 a) when reference is being made to the gatestack 1202 and the designation ‘b’ (e.g., 1208 b) when reference isbeing made to the gate stack 1204. However, according to an exemplaryembodiment, the materials given the designations ‘a’ and ‘b’ are thesame materials (i.e., have the same composition as one another) sincethey are formed at the same time (in the same step). For example, aswill be apparent from the following description, the second gatematerial 1208 a in gate stack 1202 and the second gate material 1208 bin gate stack 1204 are preferably formed from the same material that isdeposited over both of the gate stacks and then patterned.

As shown in FIG. 12, since the nanowires have been suspended over theBOX as described above, gate stack 1202 completely surrounds at least aportion of each of the nanowires. This is referred to as agate-all-around (GAA) configuration.

According to an exemplary embodiment, gate stacks 1202 and 1204 areformed by depositing a conformal gate dielectric film 1302 a and 1302 bsuch silicon dioxide (SiO₂), silicon oxynitride (SiON), or hafnium oxide(HfO₂) (or other hi-K material) around both the nanowires (labeled “NW”)and the fins, respectively. See FIG. 13A which provides a view of across-sectional cut (i.e., along line A-A′) through a portion of gatestack 1202 and FIG. 13B which provides a view of a cross-sectional cut(i.e., along line B-B′) through a portion of gate stack 1204.Optionally, a second conformal gate dielectric film 1304 a and 1304 bthat includes, for example, HfO₂, may be applied over gate dielectricfilm 1302 a and 1302 b, respectively. A (first) gate material 1306 a and1306 b is then deposited over the conformal gate dielectric film 1302 aand 1302 b (or over optional second conformal gate dielectric film 1304a and 1304 b). According to an exemplary embodiment, the gate material1306 a and 1306 b is a conformal metal gate film that includes, forexample, tantalum nitride (TaN) or titanium nitride (TiN).

Optionally, a second gate material such as doped polysilicon or metalmay then be blanket deposited onto the structure (i.e., over the gatematerial 1306 a and 1306 b so as to surround the nanowires and fins. Byway of reference to FIG. 12, hardmasks 1210 (e.g., a nitride hardmask,such as SiN) may then be formed on the second gate material, wherein thehardmasks correspond to gate lines of the nanowire FET and FinFET.Standard patterning techniques can be used to form the hardmasks 1210.The gate material(s) and dielectric(s) are then etched by directionaletching that results in straight sidewalls of the gate stacks 1232 and1204, as shown in FIG. 12. The second gate material, by this etchingstep, forms second gate material 1208 a and 1208 b over gate stacks 1202and 1204, respectively. If present, any remaining hardmask on the finsis also removed by the etching (see FIG. 14).

Spacers 1402 are formed on opposite sides of gate stack 1202 and spacers1404 are formed on opposite sides of gate stack 1204. See FIG. 14.According to an exemplary embodiment, spacers 1402 and 1404 are formedby depositing a blanket dielectric film such as silicon nitride andetching the dielectric film from all horizontal surfaces by RIE. Asshown in FIG. 14, some of the deposited spacer material can remain inthe undercut regions, since the RIE in that region is blocked by thepads.

A selective epitaxial material such as silicon (Si), silicon germanium(SiGe), or silicon carbide (SiC) 1502 is then grown to thicken theexposed portions of the nanowires, pads and fins (i.e., those portionsnot covered by a gate stack or spacers). See FIG. 15. As shown in FIG.15, the epitaxial silicon may merge the fins together with epitaxialsilicon. The growth process might involve epitaxially growing, forexample, in-situ doped Si or SiGe that may be either n-type or p-typedoped. The in-situ doped epitaxial growth process forms source and drainregions of the nanowire FET and of the FinFET (see FIG. 15). By way ofexample only, a chemical vapor deposition (CVD) reactor may be used toperform the epitaxial growth. For example, for silicon epitaxy,precursors include, but are not limited to, SiCl₄, SiH₄ combined withHCL. The use of chlorine allows selective deposition of silicon only onexposed silicon. A precursor for SiGe growth may be GeH₄, which mayobtain deposition selectivity without HCL. Precursors for dopants mayinclude PH₃ or AsH₃ for n-type doping and B₂H₆ for p-type doping.Deposition temperatures may range from about 550° C. to about 1,000° C.for pure silicon deposition, and as low as 300° C. for pure Gedeposition.

Finally, a contact material such as a silicide, germanide,germanosilicide, etc. 1602 is formed on the exposed epitaxial silicon1502. See FIG. 16. Examples of contact materials include, but are notlimited to, nickel silicide or cobalt silicide. When nickel (Ni) isused, the nickel silicide phase is formed due to its low resistivity. Byway of example only, formation temperatures can be from about 400° C. toabout 600° C. Once the contact material formation is performed, cappinglayers and vias for connectivity (not shown) may be formed.

Although illustrative embodiments of the present invention have beendescribed herein, it is to be understood that the invention is notlimited to those precise embodiments, and that various other changes andmodifications may be made by one skilled in the art without departingfrom the scope of the invention.

What is claimed is:
 1. A complementary metal-oxide semiconductor (CMOS)circuit, comprising: a wafer having a buried oxide (BOX) and an activelayer on the BOX, wherein the active layer is configured to have atleast one first region with a thickness t1 and at least one secondregion with a thickness t2, and wherein t2 is less than t1; a nanowirefield-effect transistor (FET) on the BOX formed in the second region ofthe active layer comprising: nanowires and pads patterned in the secondregion of the active layer, wherein the pads are attached at oppositeends of the nanowires in a ladder-like configuration, and wherein thenanowires are suspended over the BOX; a first gate stack that surroundsat least a portion of each of the nanowires, wherein the portions of thenanowires surrounded by the first gate stack serve as a channel regionof the nanowire FET; an epitaxial material on portions of the nanowiresand pads that serve as source and drain regions of the nanowire FET; afinFET on the BOX formed in the first region of the active layercomprising: a plurality of fins patterned in the first region of theactive layer, wherein a height of the fins patterned in the first regionof the active layer is greater than a thickness of the nanowires andpads patterned in the second region of the active layer based on thefirst region of the active layer being thicker than the second region ofthe active layer; a second gate stack covering at least a portion ofeach of the fins, wherein the portions of the fins covered by the secondgate stack serve as a channel region of the finFET; and an epitaxialmaterial on portions of the fins that serve as source and drain regionsof the finFET.
 2. The CMOS circuit of claim 1, further comprisingspacers on opposite sides of the first gate stack and on opposite sidesof the second gate stack.
 3. The CMOS circuit of claim 1, furthercomprising a contact material both i) on the epitaxial material on thenanowires and pads and ii) on the epitaxial material on the fins.
 4. TheCMOS circuit of claim 1, wherein t1 is from about 5 nanometers to about40 nanometers, and t2 is from about 3 nanometers to about 20 nanometers.5. The CMOS circuit of claim 1, wherein the nanowire FET is an n-typefield-effect transistor (NFET) device, and the finFET is a p-typefield-effect transistor (PFET) device.
 6. The CMOS circuit of claim 1,wherein the first gate stack and the second gate stack each comprises: afirst conformal gate dielectric film; a second conformal gate dielectricfilm on the first conformal gate dielectric film; and a conformal metalgate film on a side of the second conformal gate dielectric filmopposite the first conformal gate dielectric film, wherein the firstconformal gate dielectric film is present on the nanowires in the firstgate stack and on the fins in the second gate stack, and wherein thefirst conformal gate dielectric film, the second conformal gatedielectric film, and the conformal metal gate film each have a samecomposition in the first gate stack as the first conformal gatedielectric film, the second conformal gate dielectric film, and theconformal metal gate film in the second gate stack.